Babatunde, R.A. and Adegboyo, O. O. (2018) EFFECTS OF DEPOSITION TEMPERATURE OF ZnS THIN FILM on OPTICAL AND MORPHOLOGICAL PROPERTIES of ZnS DEPOSITED BY CHEMICAL BATH DEPOSITION METHOD FOR PHOTOVOLTAIC APPLICATION. In: Proceedings of the 1st International Conference, The Federal Polytechnic, Ilaro, 5th – 8th Nov., 2018 1, 5th - 8th November, Proceedings of the 1st International Conference, The Federal Polytechnic, Ilaro, 5th – 8th Nov., 2018 1.
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Abstract
The effect of deposition temperature was investigated on optical and morphological properties of synthesized ZnS thin film. ZnS thin films were prepared at different temperature and constant deposition period of 60 minutes onto the glass substrates by chemical bath deposition technique at a deposition temperature of 500C, 700C and 900C . The precursor was prepared using a mixed aqueous solution of zinc sulphate as a source of Zinc and thiourea as a source of sulphur while ammonia serves as the complexing agent. After the deposition, the thickness of the samples was determined using a double weighing method, the morphological and optical properties of the films were determined using Scanning Electron Microscope (PHENON WORD), UV-visible double beam spectrophotometer (ATICO) respectively. The result shows that transmittance spectral increases in the visible region of wavelength 400nm to 800nm and decreases in the infrared region at above 800nm wavelength. The transmittance spectral of the film deposited at 700C shows the highest value of 96% while the films deposited at 500C and 900C have the same value of 66%. The extrapolated optical band gaps of energies for the film deposited at 500C, 700C and 90 are 4.0 eV. 3.7 eV and 3.9 eV respectively. The microstructural images of all the samples were rough and the grains were dense. But the images show that the density of the film is inversely proportional to deposition temperature while the size of the particle becomes larger and clearer as deposition temperature increases. All the results indicated that the films were good material for a window layer in the fabrication of thin-film heterojunction solar cell. It is therefore recommended to replace toxic CdS for window layer in CdTe and CIGS heterojunction solar cells andother optoelectronic devices because of its environmentally friendly, exhibits high bandgap energies and shows high transmittance
Item Type: | Conference or Workshop Item (Paper) |
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Subjects: | Q Science > Q Science (General) Q Science > QC Physics |
Divisions: | Faculty of Engineering, Science and Mathematics > School of Physics |
Depositing User: | Mr. Bolanle Yisau I. |
Date Deposited: | 01 Jun 2021 13:03 |
Last Modified: | 01 Jun 2021 13:03 |
URI: | http://eprints.federalpolyilaro.edu.ng/id/eprint/1625 |
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